| PART |
Description |
Maker |
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM
128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
| HYM71V16635HCLT8R-H HYM71V16635HCLT8R-K HYM71V1663 |
16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| HYM71V16635HCT8 |
16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| HY57V283220T-I HY57V283220LT-PI |
4Mx32|3.3V|4K|55/6/7/8/P/S|SDR SDRAM - 128M
4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
HYNIX SEMICONDUCTOR INC
|
| HYM71V16M655HCLT6-8 HYM71V16M655HCT6 |
16Mx65|3.3V|8/P/S|x8|SDR SDRAM - SO DIMM 128MB 16Mx65 | 3.3 | 8/P/S | x8 | SDRAM的特别提款权-28MB的内
|
Hitachi,Ltd.
Hynix Semiconductor
|
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| PLL103-53XM PLL103-53 PLL103-53XC PLL103-53XI |
DDR SDRAM Buffer with 5 DDR or 3 SDR/3 DDR DIMMS
|
PLL[PhaseLink Corporation]
|
| HY57V28820HCLT-I |
16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 16Mx8 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
TE Connectivity, Ltd.
|
| HYM72V64756BLT8-P HYM72V64756BLT8-S HYM72V64756BT8 |
64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
|
Samsung Semiconductor Co., Ltd.
Leshan Radio Company, Ltd.
Hynix Semiconductor
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| IBM0364404CT3C-75A IBM03644B4CT3C-75A IBM0364404CT |
x8 SDRAM
x16 SDRAM
x4 SDRAM Module x4内存模块
|
Ecliptek, Corp.
|
